Brand:Multi-Field
Model :
FMR (H in plane)/FMR (H out of plane)/ST-FMR (H in plane)/ST-FMR (H out of plane)
Maximum Test Frequency 20 GHz & 40 GHz Versions;
Controller includes FMR, ST-FMR, ISHE & Spin-Pumping measurement functions;
Provides a 3 nm-NiFe thin film ~calibrated sample signal;
The measurement frequency is continuously adjustable and the power output is continuously adjustable;
Sample bar options: vertical magnetic field and parallel magnetic field;
Sample bar options: Vertical magnetic field and parallel magnetic field; FMR sample bar: with Helmholtz modulation coil;
ST-FMR-Sample Rod: Retains 6 DC measurements;
Automatic control software;
With the use of the TeslatronPT, PPMS, Cryogenics and Nanjing Pengli-CPMS systems.
Controller includes FMR, ST-FMR, ISHE & Spin-Pumping measurement functions;
Provides a 3 nm-NiFe thin film ~calibrated sample signal;
The measurement frequency is continuously adjustable and the power output is continuously adjustable;
Sample bar options: vertical magnetic field and parallel magnetic field;
Sample bar options: Vertical magnetic field and parallel magnetic field; FMR sample bar: with Helmholtz modulation coil;
ST-FMR-Sample Rod: Retains 6 DC measurements;
Automatic control software;
With the use of the TeslatronPT, PPMS, Cryogenics and Nanjing Pengli-CPMS systems.
| Parameter Item |
FMR (H in-plane)
|
FMR (H out-of-plane)
|
ST-FMR (H in-plane)
|
ST-FMR (H out-of-plane)
|
|---|---|---|---|---|
| Functions / Options |
Enables FMR measurement and Spin pumping – ISHE measurement on thin film samples
|
Enables FMR measurement and Spin pumping – ISHE measurement on thin film samples
|
Enables ST-FMR measurement and Spin pumping – ISHE measurement on micro-nano devices
|
Enables ST-FMR measurement and Spin pumping – ISHE measurement on micro-nano devices
|
| Operating Environment | Temperature: 1.4 K ~ 400 K; Pressure: 10⁵ ~ 10⁻⁵ Pa; Magnetic Field: 0 ~ 18 Tesla | Temperature: 1.4 K ~ 400 K; Pressure: 10⁵ ~ 10⁻⁵ Pa; Magnetic Field: 0 ~ 18 Tesla | Temperature: 1.4 K ~ 400 K; Pressure: 10⁵ ~ 10⁻⁵ Pa; Magnetic Field: 0 ~ 18 Tesla | Temperature: 1.4 K ~ 400 K; Pressure: 10⁵ ~ 10⁻⁵ Pa; Magnetic Field: 0 ~ 18 Tesla |
| Compatible Outer Diameter | dia-26 mm / dia-30 mm / dia-50 mm | dia-26 mm / dia-30 mm / dia-50 mm | dia-26 mm / dia-30 mm / dia-50 mm | dia-26 mm / dia-30 mm / dia-50 mm |
| Operating Frequency | 20 / 40 GHz | 20 / 40 GHz | 20 / 40 GHz | 20 / 40 GHz |
|
RF Loss
|
20 GHz version: -6 dB (@ 20 GHz), -18 dB (@ 40 GHz)
|
20 GHz version: -6 dB (@ 20 GHz), -18 dB (@ 40 GHz)
|
20 GHz version: -6 dB (@ 20 GHz), -18 dB (@ 40 GHz)
|
20 GHz version: -6 dB (@ 20 GHz), -18 dB (@ 40 GHz)
|
| Leakage Current | < 100 pA @ 100 V | < 100 pA @ 100 V | < 100 pA @ 100 V | < 100 pA @ 100 V |
| RF Channels | 2 | 2 | 2 | 2 |
| DC Channels | 6 | 6 | 8 | 6 |
| Magnetic Field Direction | Magnetic field parallel to the sample plane | Magnetic field perpendicular to the sample plane | Magnetic field parallel to the sample plane | Magnetic field perpendicular to the sample plane |
| Sample Type | Thin film samples (placed upside down on the CPW surface) | Thin film samples (placed upside down on the CPW surface) | Micro-nano devices (CPW and devices connected by wire bonding) | Micro-nano devices (CPW and devices connected by wire bonding) |
| Measurement Functions | FMR measurement, Spin Pumping – ISHE voltage measurement | FMR measurement, Spin Pumping – ISHE voltage measurement | ST-FMR measurement, Spin Pumping – ISHE voltage measurement | ST-FMR measurement, Spin Pumping – ISHE voltage measurement |
| Compatible Instruments | Multi-field Technology FMR test instrument, commercial vector network analyzer, etc. | Multi-field Technology FMR test instrument, commercial vector network analyzer, etc. | Multi-field Technology FMR test instrument, commercial signal generator, lock-in amplifier, etc. | Multi-field Technology FMR test instrument, commercial signal generator, lock-in amplifier, etc. |